零件编号 : IRLR024N
功能 : HEXFET Power MOSFET
制造商 : International Rectifier
引脚图 :
描述
Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
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文件中的其他数据表：
IRLR024N,IRLU024N,LR024N,LRO24N,LU024N